Numerical Study of a Silicon Permeable Base Transistor with a Non-Uniform Doping Profile

We present the results of the 2D numerical simulation of a silicon permeable base transistor. We correlate the slight degradations of the transconductance and transit frequency, as well as the large improvement of the power capability which were obtained with a non-uniform doping profile, to the physical mechanisms involved, and showed that a significant net improvement of the f
T
V
B
product can be gained by this means.