Impact of Latch Phenomenon on Low Frequency Noise in SOI MOSFETs

The low frequency noise in fully (FD) and partially (PD) depleted MOSFETs/SOI is experimentally investigated for various channel lengths and drain voltages. The origin of the noise is discussed in order to understand the physical mechanisms involved in this type of noise. Furthermore, the influence of the latch effect on low frequency noise is analysed. It is found that the flicker noise is essentially caused by the carrier number fluctuations and an excess noise is obtained in the presence of a parasitic bipolar action.