High Quality Polycrystalline Thin Films Transistors Made by Excimer Laser Crystallisation

We have studied excimer laser crystallisation of a-Si films and in particular device performance as a function of the crystalline quality of the polysilicon films. For optimised irradiation conditions, we report mobilities of 350 and 150 cm
²
/Vs respectively for n and p-type devices and a delay time of 4 ns / stage measured at 10V on 5 μm CMOS ring oscillators.