Controlled Sub-nm Oxide Growth and its Application to High Speed Bipolar Poly-Emitter Transistors

Controlled sub-nm oxide growth on (100) silicon wafers in a controlled, O
2
containing ambient of a LPCVD-polysilicon deposition clustertool is demonstrated. As a comparison, a conventional LPCVD-polysilicon deposition furnace is used which generates a sub-nm oxide during loading the wafers into the heated furnace. For the first time results for different substrate doping levels are presented. Applications to high speed bipolar poly-emitter transistors are shown.