Analysis and Modeling of Low Frequency Noise in Extremely Deep Submicron Silicon CMOS Devices

An analysis and modelling of the low frequency noise characteristics of deeply submicronic CMOS devices is conducted. It is shown that the scaling down of the gate area leads to dramatic change of the noise nature and to a substantial increase of the noise level dispersion. A generic modelling of the noise amplitude and spectrum is worked out as a function of geometry and biases, allowing a good representation of the noise characteristics to be obtained.