Quantum ballistic transport in a dual-gate Si transistor

By solving three-dimensional (3-D) Poisson and Schrodinger equations, we have shown that the formation of quantum dots are not very likely in the dual-gate Si transistor recently processed. The observed oscillations in the transconductance versus upper and lower gate voltages can be understood as elastic quantum ballistic transport from the source to the drain through the conducting channel. The importance of the fringing electric field effect and the quantum transport characteristics are to be emphasized in investigation and design of small size electronic devices.