Monolithic three-dimensional integrated circuits using carbon nanotube FETs and interconnects

We experimentally demonstrate, for the first time, monolithic three-dimensional integrated circuits consisting of multiple (up to three) layers of monolithically integrated circuits consisting of carbon nanotube field-effect transistors (CNFET) circuits and carbon nanotube (CNT) interconnects. These experimental demonstrations are made possible through a low-temperature (≪ 250°C) process, presented in this paper, for monolithic three-dimensional integration of CNFETs and CNT interconnects. Such a low-temperature process is enabled by low-temperature wafer-scale transfer of CNTs which decouples high-temperature CNT growth from low-temperature monolithic 3D integration.