High performance GeO2/Ge nMOSFETs with source/drain junctions formed by gas phase doping

We have revealed that the MOVPE-based gas phase doping (GPD) can yield lower arsenic diffusion constant and lower leakage current n+/p junctions in Ge compared to conventional ion implantation doping. Thus, the GPD is quite effective for realizing high performance Ge n-channel MOSFETs. By using the GPD for source/drain (S/D) junction formation, the GeO
₂
/Ge nMOSFETs have achieved high electron mobility of 804 cm
²
/Vs with maintaining low junction leakage current of 10
^-3
A/cm
²
and high I
_on
/I
_off
ratio of 10
⁴
.