Development toward wafer-scale graphene RF electronics

We will present recent development of graphene FET technology on a wafer scale, including epitaxial graphene growth, device fabrication and characterization. The epitaxial growth of graphene on 2-inch wafers were fabricated via graphitization of Si-face SiC(0001) substrates. The sheet electron carrier density of these layers were typically 10
^-13
/cm
²
at room temperature and had mobility of ~ 1500 cm
²
V
^-1
S
^-1
or higher. Graphene FETs were fabricated with source and drain non-alloyed ohmic metal schemes. Metal gates were used on top of atomic-layer-deposited high-k (Al
₂
O
₃
) gate dielectric layer. DC and RF performance of the world's first epitaxial graphene RF FETs is presented.