Strained Single-Grain Silicon n- and p-Channel Thin-Film Transistors by Excimer Laser

We have investigated the carrier mobility enhancement of the n- and p-channel single-grain silicon thin-film transistors by the ¿-Czochralski process at a low-temperature process (< 350°C). The high laser energy density near the ablation phenomenon that completely melts the grain filter during the crystallization is responsible for the high tensile strain of the silicon grains, which leads to carrier mobility enhancement.