Gate all around (GAA) strained-silicon-on-nothing (SSON) MOSFETs and evaluation of their strain by nano-beam diffraction (NBD)

We have developed strained-Si-on-nothing (SSON) MOSFETs with a gate all around (GAA) structure by using selective wet etching and doped poly-Si CVD techniques. The nano-beam diffraction (NBD) method was employed to directly evaluate the strain within the SSON channels. We have demonstrated the enhanced drive current, Id, of the GAA SSON MOSFETs over that of relaxed control MOSFETs.