Microwave Performance of $\hbox{InAlAsSb/In}_{0.35} \hbox{Ga}_{0.65}\hbox{Sb/InAlAsSb}$ Double Heterojunction Bipolar Transistors

In this letter, we report on high-speed InAlAsSb/InGaSb/InAlAsSb double heterojunction bipolar transistors (HBTs) (DHBT) fabricated using a conventional triple-mesa process. Current gain cutoff frequencies f
_T
of 52 GHz and maximum oscillation frequencies f
_MAX
of 48 GHz were extracted from measured scattering parameters for devices with 1 ×15 ¿m
²
emitter size. To the best of our knowledge, these results are the first RF performance ever reported, and they demonstrate the feasibility and potential of InGaSb-based HBT for high-speed electronics applications.