Room-temperature photo-pumped operation of 1.58-μm vertical-cavity lasers fabricated on Si substrates using wafer bonding

Long-wavelength vertical cavity lasers have been successfully fabricated on Si substrates using direct wafer bonding. InGaAs-InGaAsP multiquantum-well active layers with 40.5-pair InGaAsP-InP stacked mirrors have been directly bonded on 3.5-pair Al
₂
O
₃
/a-Si mirrors deposited on Si substrates. The sample has been optically pumped at room temperature and lasing operation at 1.58-μm has been achieved.