Application of ArF excimer laser in MOCVD growth and in situ characterisation of gallium nitride

Laser-induced chemical vapour deposition (LCVD) is an attractive technology for the growth of films on fragile and thermally sensitive substrates at low temperature. The laser may simultaneously be used as a probe, both in excitation of semiconductors for in situ photoluminescence measurements and for spectroscopic analysis of MOCVD precursor dissociation paths. the authors describe application of an ArF excimer laser (193 nm, 6.4 eV) to growth and characterisation of gallium nitride.