Investigation of Electrostatic Integrity for Ultrathin-Body Germanium-On-Nothing MOSFET

This paper examines the electrostatic integrity of ultrathin-body (UTB) germanium-on-nothing (GeON) MOSFET using theoretically calculated subthreshold swing from the analytical solution of Poisson's equation. Our results indicate that UTB GeON MOSFETs with the ratio of channel length (
L
_g
) to channel thickness (
T
_ch
) around 4 can show comparable subthreshold swing to that of the silicon-on-nothing counterparts. The impact of buried insulator (BI) thickness (
T
_BI
) and BI permittivity on the electrostatic integrity of the UTB germanium channel devices are also examined.