Electrical properties of polycrystalline p-CuxO MOS capacitors with SiO2/HfO2 high κ stack gate dielectric on silicon substrate

Polycrystalline p-type Cu
x
O film was deposited after growth of HfO
2
dielectric on Si substrate by pulsed laser deposition, and Cu
x
O MOS capacitors with SiO
2
/HfO
2
stack gate dielectric have been primarily fabricated and investigated. Results of measurements indicate that capacitance equivalent thickness and equivalent κ-value of SiO
2
/HfO
2
stack dielectric for post-deposition annealing (PDA) sample are 4.78 nm and 10.2 respectively, and gate leakage current density is ∼10
⁻⁴
A/cm
2
at V
g
= −1 V. Results also show that PDA can improve quality of interface and reduce gate leakage.