A high gain lateral BJT on thin film silicon substrate

In this paper, a symmetric dual-emitter LBJT (SDE LBJT) structure on TFSOI substrates has been designed and simulated, and suitable doping profiles are used for improving LBJT performance. Simulations show that the device has good DC characteristics. The SDE LBJT with a base length of 0.2µm can achieve a current gain over 1500, which is 7.5 times improvement in current gain, in comparison to the LBJT reported previously. Also has good current drive and high frequency capability. These results indicate that the SDE LBJT structure is suitable for many low power mixed mode applications.