Fabrication of high compressive stress silicon nitride membrane in strained silicon technology

The mechanism of compressive stress in silicon nitride membrane is studied in this paper. The effects of the various process parameters on the compressive stress in silicon nitride are analyzed and discussed on the basis of the current method using PECVD equipment. The high compressive stress silicon nitride membrane has been fabricated on the optimization of the process parameters, and the compressive stress is up to -1.08 GPa. Finally, the method of further improving the compressive stress in silicon nitride membrane is put forward.