Modeling SOI-MOSFET using neuro space mapping

The drift-diffusion (DD) model is not accurate for simulation of sub-micrometer semiconductor devices. Using RBF NN, a neuro space mapping is proposed to DD model parameters. The DD model with mapped parameters can produce accurate simulation results of the hydrodynamic model. Simulations of a SOI-MOSFET confirm the ability of the proposed method for submicron device simulation.