Performance boost for In0.53Ga0.47As channel N-MOSFET using silicon nitride liner stressor with high tensile stress

In this paper, strained In
_0.53
Ga
_0.47
As MOSFET with SiN liner stressor was demonstrated for the first time. An advanced surface passivation (SiH
₄
+NH
₃
) technology was also employed for achieving good electrical characteristics. The SiN liner stressor gives rise to lateral tensile strain in the channel for significant electron mobility and drive current enhancement. High-stress SiN liner is a promising stressor for boosting performance in future III-V MOSFETs.