Design of $X$-Band and $Ka$-Band Colpitts Oscillators Using a Parasitic Cancellation Technique

An
X
-band and two
Ka
-band monolithic microwave integrated circuit (MMIC) common drain Colpitts oscillators using a parasitic cancellation technique are designed and fabricated in a 0.2-μm GaAs pHEMT technology with a
f
_T
of 60 GHz. The parasitic cancellation technique significantly improves the negative resistance and increases the maximum operating frequency, which is suitable for microwave and millimeter-wave applications. An in-depth theoretical analysis of the Miller effect and insights in the behavior of the input impedance with the parasitic cancellation are provided. The effect of the
Q
-factor of the inductor used in the cancellation, and the impact of the parasitic cancellation technique on phase noise and frequency tuning range are analyzed and discussed in detail. The
X
-band design has a measured phase noise of -117.5 dBc/Hz at 1 MHz offset with an output power of -9.3 dBm . The first
Ka
-band design has a measured phase noise of -94 dBc/Hz at 1 MHz offset with an output power of +0.2 dBm. The second
Ka
-band design providing more flexibility has a measured phase noise of -98.5 dBc/Hz at 1 MHz offset with an output power of + 0.3 dBm. The two
Ka
-band designs achieve very high
f
_OSC
/
f
_T
ratios and also demonstrate performance comparable to the best previously published oscillators in a similar frequency range.