Characterization of reverse leakage components for ultrashallow p+/n diodes fabricated using gas immersion laser doping

We report on fabrication of p/sup +//n diodes with junction depths less than 60 nm using gas immersion laser doping (GILD). Statistics for diodes with junction depths of 39 nm and 50 nm, surface concentrations exceeding 10/sup 20/ atoms/cm
³
, and sheet resistances less than 160 /spl Omega///spl square/ are presented. Values for area, perimeter, and corner leakage currents are measured at less than 1.6 nA/cm
²
, 2.5 fA/μm and 10 fA/corner respectively, at 3.4 V reverse bias. These characteristics demonstrate that the laser doping process is viable for source/drain doping in 0.18 μm CMOS technology.