Reduced turn-on delay time in 1.3-μm InGaAsP-InP n-type modulation-doped strained multiquantum-well lasers with a buried heterostructure

A reduction in both the threshold current and carrier lifetime is demonstrated, for the first time, in an n-type modulation-doped InGaAsP strained multiquantum well laser with a buried heterostructure. Threshold current and carrier lifetime is reduced by 10% and 15%, respectively, as compared with a undoped MQW laser, which results in a 35% decrease in the turn-on delay time. This confirms the suitability of this type of laser for use as a light source for high-density parallel optical interconnection.