Stark Effects Model Used to Highlight Selective Activation of Failure Mechanisms in MQW InGaN/GaN Light-Emitting Diodes

This paper demonstrates the feasibility of creating specific defects in double-heterostructure InGaN/GaN commercial light-emitting diodes by neutron irradiation. Using controlled neutron energy, only one failure mechanism can be activated. Defects are located on the side of the chip and increase the leakage current driven by the well-known Poole-Frenkel effect with
E

_c
-
E

_T
= 130 meV electron trap energy level. The maximal amplitude of the optical spectrum also reveals a drop of about 20% associated with the rise of the leakage current. The Stark effect model highlights the origin of the degradation.