Flexible plastic substrate ZnO thin film transistor circuits

Oxide semiconductor-based thin film transistors (TFTs) have potential as higher performance and improved stability replacements for amorphous silicon TFTs in displays and other large-area electronics. ZnO TFTs fabricated by pulsed laser deposition (PLD) at 400
^¿
C on GaAs substrates have demonstrated mobility over 100 cm2/V-s, and five-stage ring oscillators based on 0.5 ¿m gate length indium gallium-zinc-oxide (IGZO) TFTs fabricated on silicon substrates have demonstrated propagation delay below 1 ns/stage for bootstrapped ring oscillators.