Chalcogenide phase change induced with single-wall carbon nanotube heaters

Phase-change memory (PCM) is a promising candidate for non-volatile data storage. In this study, a key step in this area, by inducing ultra-narrow (5-10 nm) phase-change regions with individual single-wall carbon nanotube (SWNTs) heaters, and programming currents of the order 10 ¿A was demonstrated. Electrical measurements of such devices show step-like increases in current (up to 15 ¿A steps) that demonstrate GST crystallization by Joule heating in the SWNTs, which opens up a parallel current flow path. Electrical characteristic of device before and after GST sputtering, shows change in resistance with sweep and GST crystallization is observed by AFM topography.