RF and 1/f noise investigations on MESFETs and circuits transplanted by epitaxial lift off

In this paper, we present the results of RF and noise measurements of MESFETs transplanted by epitaxial lift off (ELO). ELO is a technology by which epitaxially grown layers are lifted off from their growth substrate and subsequently reattached to a new host substrate. In the experiments described here a 800 mm thick GaAs film containing MESFETs or complete microwave circuits is transplanted onto semi-insulating InP. Gate leakage current, RF characteristics, and noise performance of MESFETs and GaAs circuits are compared before and after ELO. Special attention was given to low-frequency (1/f) noise, 1/f noise is believed to be caused by surface as well as bulk effects. An increase in 1/f noise could have been predicted since a new surface is exposed during the transplantation process. The mechanical stress during the transplantation could cause crystal damage creating additional traps which could also result in an increase in 1/f noise.