Solar-blind UV photodetectors for large area applications

In this paper, we extensively investigate a family of solar-blind thin-film photodetectors optimized for the ultraviolet spectrum (UV). The devices are p-i-n structures made of hydrogenated amorphous silicon (a-Si:H) and silicon carbide (a-SiC:H) on a glass substrate. At room temperature the photodetectors exhibit values of quantum efficiency of 20% at /spl lambda/=187 nm, and are transparent to visible radiation. The excellent sensitivity of the device at short wavelengths is explained within the framework of a diffusive model of transport, taking into account the effects of hot carrier relaxation. The rejection of visible light is obtained with an appropriate design of the energy gap and intrinsic layer thickness. The great advantage of this technology lies in the possibility to produce low-cost, large-area arrays of photodetectors.