Hot carrier (HC) and bias-temperature-instability (BTI) degradation of MuGFETs on silicon oxide and silicon nitride buried layers

The results are reported of an experimental study of the hot carrier (HC) and bias-temperature-instability (BTI) reliability of MuGFETS, fabricated on SOI wafers with silicon oxide and silicon nitride buried layers. N- and P-channel devices of 65 nm long and 42 nm or 32 nm wide channels were stressed and measured at room temperature and at 125degC. A complicated picture emerges: HC degradation is dominant in n-MuGFETs whereas both HC and BTI mechanisms are active concurrently in p-MuGFETs under hot carrier stress. When HC degradation dominates, the wider fin devices tend to degrade more than the narrower; the reverse is generally true for BTI degradation.