N-type single nanoparticle ZnO transistors processed at low temperature

This paper presents a single nanoparticle transistor using ZnO nanoparticles as the semiconductor material. The channel region was produced by spin-coating of a water-based ZnO dispersion onto a metal nanogap template. The device shows better performance compared to ZnO nanoparticle thin-film transistors, whereas no annealing above 200degC was performed. Hence, the integration technique is compatible to glass and foil substrates. I-V-measurements revealed the subthreshold swing of 290 mV/dec, the on/off current ratio of 5times10
³
and the carrier mobility of 0.05 cm
²
/Vs, which is the highest mobility of lowt-emperature solution-processed ZnO transistors reported to date. The operating voltages were below 5 V.