Direct observation of fluctuations in both the number and individual carrier capture rate of interface traps in small gate-area MOSFETs

Fluctuations in not only the number but also the individual carrier capture rate of interface traps in small gate-area MOSFETs containing only less than several interface traps have been investigated from an understanding of newly observed transient charge pumping characteristics. These fluctuations can indicate the possible impact on the fluctuations in threshold voltage of future digital MIS devices.