Effect of Intensity Modulated Optical Illumination on the Y Parameters of the GaAs MESFET

In this paper the effect of an intensity-modulated optical signal on the Y parameters of a MESFET is studied theoretically. It shows that at a constant gate voltage the drain current of the device can be controlled by the intensity of incident optical power density and the frequency of the modulating signal frequency because the Y parameters of the device change with the intensity of incident optical power density and the frequency of the modulating signal.