MBE growth and characterization of dilute InNSb film

A series of dilute InNSb films with different N composition were prepared at various growth conditions by RF-MBE. The film samples were characterized by Atom force microscopy (AFM), high resolution X-ray diffraction (HRXRD) and room temperature Raman scattering spectroscopy, the measurements indicated that the InNSb films are of high crystalline quality and most of the N atoms are at the substituted Sb sites.