Optically-activated gate control (OAGC) for the next-generation SiC-based power electronics devices and applications

Novel photonic control of power semiconductor devices for next-generation power electronics applications are discussed with special emphasis on SiC DMOSFET. Key mechanism behind the photonic modulation of the switching dynamics of the SiC DMOSFET is illustrated. Specific aspects of switching loss reduction, compensation for temperature-induced drift, and on-state impedance control of the SiC DMOSFET are discussed along with experimental demonstration. Potential applications include high-power, high-frequency electronics in power systems, pulsed-power, EMI-immune, high power-density automotive and aerospace switching converters etc.