Improved Stress Reliability of Analog Metal–Insulator–Metal Capacitors Using $\hbox{TiO}_{2}/\hbox{ZrO}_{2}$ Dielectrics

We have studied the stress reliability of high-kappa Ni/TiO
₂
/ZrO
₂
/TiN metal-insulator-metal capacitors under constant-voltage stress. The increasing TiO
₂
thickness on ZrO
₂
improves the 125-
^deg
C leakage current, capacitance variation (Delta
C
/
C
), and long-term reliability. For a high density of 26 fF/mum
²
, good extrapolated ten-year reliability of small Delta
C
/
C
~ 0.71% is obtained for the Ni/10-nm-TiO
₂
/6.5-nm- ZrO
₂
/ TiN device at 2.5-V operation.