Low-Standby-Power Bulk MOSFET Design Using High-$k$ Trench Isolation

High-permittivity trench isolation (HTI) is proposed as a means to achieve low off-state leakage current without a high-aspect-ratio or ultrathin body structure. The HTI provides for improved capacitive coupling between the gate and the active region sidewalls, which allows the steep-retrograde body-doping profile to be recessed while suppressing short-channel effects. The result is a lower body-doping concentration at the drain junction, resulting in ~ 10times lower band-to-band tunneling leakage than for a conventional bulk MOSFET design.