A Discrete Surface Potential Model Which Accurately Reflects Channel Doping Profile and Its Application to Ultra-Fast Analysis of Random Dopant Fluctuation

A discrete surface potential model which accurately reflects channel doping profile is proposed. The proposed model is an improvement from the previously proposed model in order to accurately calculate drain current in full bias region using the same mobility and velocity saturation models as TCAD. Since the proposed model is a kind of first-principal-compact-model without any unphysical fitting parameters, it can become micro-TCAD which is a by far faster and lighter substitute for conventional TCAD. As an application of the proposed model, ultra-fast calculation of threshold voltage variation induced by random dopant fluctuation using Monte-Carlo method is introduced.