Investigation of the Noise Performance of Double-Gate MOSFETs by Deterministic Simulation of the Boltzmann Equation

Noise performance of a double-gate MOSFET is investigated by deterministic simulation of the Boltzmann equation. The fully-coupled scheme of the Boltzmann equation and Poisson equation enables both, rapid convergence of the Newton-Raphson method and noise analysis. In contrast to Monte Carlo noise simulation, it is possible to determine the spatial origin of the terminal current noise. It is confirmed that the larger part of the terminal current noise stems from the source side.