A Convergence Enhancement Method for Deterministic Multisubband Device Simulations of Double Gate PMOSFETs

For deterministic multisubband device simulations of double gate PMOSFETs, which are based on the self-consistent solution of Poisson-, k p Schrodinger-, and Boltzmann transport equation, a new convergence enhancement method has been developed. The new approach is based on a Newton approach which considers the coupling between the Poisson equation and the Boltzmann transport equation. First order perturbation theory of the Schrodinger equation is employed for the calculation of the derivative of the Boltzmann transport equation w.r.t the electrostatic potential. The simulation results show that the new approach is efficient for both near-equilibrium and non-equilibrium situations.