A 0.13 µm SiGe BiCMOS technology for mm-wave mixed-signal applications

We present a SiGe BiCMOS technology featuring high-speed HBTs with peak transit frequencies f
_T
of 240 GHz and maximum oscillation frequencies f
_max
of 330 GHz at breakdown voltages of BV
_CEO
= 1.7 V. The high-speed HBTs are integrated in a 0.13 mum RF CMOS process along with high-voltage HBTs (f
_T
= 40 GHz, f
_max
= 120 GHz, BV
_CEO
= 4.5 V) and a set of passive RF components. CML ring oscillator gate delays of 2.9 ps are demonstrated.