$\hbox{In}_{0.53}\hbox{Ga}_{0.47}\hbox{As}$ Channel MOSFETs With Self-Aligned InAs Source/Drain Formed by MEE Regrowth

Abstract-We report Al
₂
O
₃
Zln
_0.53
Ga
_0.47
As MOSFETs having both self-aligned in situ Mo source/drain ohmic contacts and self-aligned InAs source/drain n
⁺
regions formed by MBE regrowth. The device epitaxial dimensions are small, as is required for 22-nm gate length MOSFETs; a 5-nm In
_0.53
Ga
_0.47
As channel with an In
_0.4
sAl
_0.52
As back confinement layer and the n
⁺⁺
source/drain junctions do not extend below the 5-nm channel. A device with 200-nm gate length showed I
_D
= 0.95 mA/mum current density at V
_GS
= 4.0 V and g
_m
= 0.45 mS/mum peak transconductance at V
_DS
= 2.0 V.