Band-Edge High-Performance Metal-Gate/High-$\kappa$ nMOSFET Using $\hbox{Hf}{-}\hbox{Si}/\hbox{HfO}_{2}$ Stack

A record high electron mobility (248 cm
²
/V middots at
E

_eff
of 1 MV/cm) was obtained at
T

_inv
of 1.47 nm, with a band-edge effective work function, by a Hf-Si/HfO
₂
stack using gate-last process, resulting in
I

_ON
of 1178 muA/mum (
I

_OFF
of 100 nA/ mum ) at
V

_dd
of 1.0 V for a 45-nm gate nMOSFET without strain-enhanced technology.