High performances CVD diamond Schottky barrier diode — Simulation and carrying out

We have fabricated and simulated a p-type diamond Schottky diode on homoepitaxial CVD diamond. First simulations of the device under development are presented. These simulations are performed on SENTAURUS TCAD. Then, technologic steps needed to carry out the experimental device are described. From C-V measurements, the B-acceptors concentration and the barrier height extracted were N
_A
~ 1,2.10
¹⁷
cm-
³
and Phi
_B
= 1,8 eV respectively. Finally, forward current-voltage experimental measurements and simulation characteristics are compared. The device yields a maximum current density of 1200 A/cm
²
on forward direction and breakdown voltage of 25 V at room temperature. Although promising, these results do not meet simulation predictions.