Effects of gallium on the structure and electrical properties of 0.65 Bi0.94La0.06) (GaxFe1-x)O3-0.35PbTiO3 ceramics

Crystalline solutions of 0.65 (Bi
_0.94
La
_0.06
) (Ga
_x
Fe
_1-x
)O
₃
-0.35PbTiO
₃
ceramics (BLGF-PT) for x = 0 and 0.05 have been fabricated by the solid-state reaction method. X-ray diffraction (XRD) was utilized to characterize the crystal structure and examine any possible impurities existing in the ceramics. The effects of Ga substitution on dielectric properties of the samples were studied at frequencies from 10
²
to 10
⁶
Hz over a temperature range from 20 to 620degC. The results indicate that Ga modification can reduce the room temperature dielectric loss. The conduction mechanism of the material was investigated using ac conductivity. It is concluded that electrons originating from Fe
²⁺
and oxygen ion vacancies are the main charge carriers, and Ga doping could decrease the electronic conduction effectively. The frequency dependence of ac conductivity was found to follow Jonscher's universal power law.