Design of wideband CMOS LNA with active inductor and using noise-canceling technique

A wideband CMOS low-noise amplifier (LNA) is presented in this paper. The LNA exploits a combination of a common-gate stage and a common-source stage to cancel the noise from the input matching device. An active inductor is used to extend the bandwidth and minimize the chip area. It is designed with 0.18 mum CMOS process in an active area of 0.04 mm
²
. Post simulation shows that the LNA has a maximum power gain of 14 dB and noise-figure less than 4 dB from 375 MHz to 2.18 GHz while drawing 8.1 mA from 1.8 V supply voltage including output buffer.