Behavior of various geometry MagFET structures

This paper deal with characterization of various MagFET structures in alternating magnetic field in frequency range from 20 Hz to 5 kHz. 2D numerical simulation of MagFET structures has been used to investigate current density distribution and influence of MagFET geometry to the external magnetic field sensitivity. Rectangle- and sectorial-shaped structures of various dimensions were designed and fabricated in standard 1 mum two metal CMOS technology. Fabricated MagFET devices were characterized for applications as a sensor of external magnetic fields. The measurement results show dependence of MagFETs external magnetic field sensitivity on structure geometry, dimensions and biasing conditions.