Radiation characterization of a low power 0.5 /spl mu/m SOI-CMOS technology

SOI technologies such as bonded and SIMOX are good candidates to replace SOS in environments requiring radiation hardness up to and above 1 Mrad. We have developed a 0.5 /spl mu/m SOI-CMOS process that is rad-hard to at least 300Krad(SiO2). The process and device characteristics, along with radiation results, are presented.