Reliability of soldered silicon devices on copper alloys

Functional reliability of power ICs is dependent on the integrity of IC/heat transfer joint area. Any major reactions during soldering on the heat-spreader and transport of reaction products to the silicon/metal interface have an adverse effect on the IC performance. The robustness of silicon backside metallization and the selection of metallization scheme can prevent the solder reactions at the silicon surface. This paper presents the evaluation of solder reactions with silicon and their impact on the package reliability.