Modeling substrate diodes under ultra high ESD injection conditions

In this paper the behavior of P
⁺
-N
^-
-N
⁺
substrate diodes under ultra high injection conditions will be analyzed both numerically and experimentally. The J(V) characteristic in this regime will be analytically obtained, modeled and verified both on numerical simulations and on measured devices. For modeling purposes, an analytical fitting law matching the J(V) characteristic over a broad range of injection levels will be proposed. Self-heating effects and process/layout variations will be analyzed too.