A new erase VT distribution model for reliability design in high density flash EEPROM

This paper describes an improved analytical F-N channel erase and V/sub T/ distribution model by including both process and cell parameters. This model is also able to predict the tightening of V/sub T/ distribution after using F-N soft reprogramming techniques. The accuracy of the model is verified by measured V/sub T/ curves and distribution. This new model provides a simple and useful tool for cell optimization and reliability design-in by accurately correlating V/sub TE/ distribution to physical parameters of process and memory cell.